STUDY OF SEVERAL KINDS OF ELECTRON IRRADIATION-INDUCED DEFECTS IN n-TYPE LPE GaAs LAYERS.

Using the Deep Level Transient layers (DLTS) method in conjunction with the C-V method, the introduction rate and isochronal annealing behavior (from 400 K to 550 K) of E//c, E//4, E//5 and P//1, P//2, P//3 traps induced by 0. 5 Mev, 1 Mev and 5 Mev electron irradiation at room temperture in n-Type LPE GaAs layers have been studied. Judging from the dependence of introduction rates on irradiation energy, P//2 and P//3 traps are associated with the displacement of two or more neighboring atoms and not with the displacement of one single atom like E//3, E//4 and E//5 traps. It has been found that, when irradiation energy is changed from 0. 5 Mev to 5 Mev, the introduction rates of E//3 and E//5 defects are increased by 13 and 9 times respectively, while the introduction rate of E//4 trap is increased by a factor of 55. Thus, E//4 trap can be created not only by irradiation itself, but also by the dissociation of a certain complex defect, which is unstable at room temperature and created by the irradiation of higher energy.