Gate length dependence of hot carrier reliability in low-temperature polycrystalline-silicon P-channel thin film transistors

被引：0

作者：

Uraoka, Yukiharu ^{[1
]}

Morita, Yukihiro ^{[2
]}

Yano, Hiroshi ^{[1
]}

Hatayama, Tomoaki ^{[1
]}

Fuyuki, Takashi ^{[1
]}

机构：

[1] Graduate Sch. of Materials Science, Nara Inst. of Science and Technol., Takayama, 8916-5, Ikoma, Nara 630-0101, Japan

[2] Devices Development Center, Matsushita Electric Indust. Co. Ltd., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 10期

关键词：

D O I：

10.1143/jjap.41.5894

中图分类号：

学科分类号：

摘要：

引用

页码：5894 / 5899