KINETICS OF OPTICAL REFLECTION DURING PULSED LASER ANNEALING OF ARSENIC AND BORON ION IMPLANTED SILICON.

被引：0
|
作者：
Baltramiejunas, R. [1 ]
Gaska, R. [1 ]
Kuokstis, E. [1 ]
机构：
[1] Vilnius State Univ, Vilnius, USSR, Vilnius State Univ, Vilnius, USSR
来源：
Revue roumaine de physique | 1985年 / 31卷 / 9-10期
关键词：
HEAT TREATMENT - Annealing - LASER PULSES;
D O I：
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中图分类号：
学科分类号：
摘要：
The influence of laser light nanosecond pulse irradiation of semiconductor surface on the temporal behavior of its optical properties is studied. It was found that regularities are present near the melting threshold, showing that a certain process of solid state phase transition, apparently photochemical reaction, is responsible for the modification of the material.
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页码：1025 / 1029
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