SiC power devices for high voltage applications

被引:0
|
作者
ABB Corporate Research, Electrum 215, S-16 440, Stockholm-Kista, Sweden [1 ]
不详 [2 ]
不详 [3 ]
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] SiC power devices for high voltage applications
    Rottner, K
    Frischholz, M
    Myrtveit, T
    Mou, D
    Nordgren, K
    Henry, A
    Hallin, C
    Gustafsson, U
    Schöner, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 330 - 338
  • [2] SiC devices for high voltage high power applications
    Sugawara, Y
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 963 - 968
  • [3] An Update on High Voltage SiC Power Devices
    Agarwal, A.
    Zhang, Q.
    Das, M.
    Ryu, S.
    Cheng, L.
    O'Loughlin, M.
    Burk, A.
    Palmour, J.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES, 2011, 41 (08): : 39 - 41
  • [4] High Power Medium Voltage Converters Enabled by High Voltage SiC Power Devices
    Parashar, Sanket
    Kumar, Ashish
    Bhattacharya, Subhashish
    2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA), 2018, : 3993 - 4000
  • [5] High-voltage SiC and GaN power devices
    Chow, TP
    MICROELECTRONIC ENGINEERING, 2006, 83 (01) : 112 - 122
  • [6] Towards Very High Voltage SiC Power Devices
    Planson, D.
    Brosselard, P.
    Tournier, D.
    Phung, L. V.
    Brylinski, C.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2, 2012, 50 (03): : 425 - 436
  • [7] High-voltage SiC and GaN power devices
    Chow, TP
    PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2004, : 198 - 200
  • [8] Neutron sensitivity of high voltage SiC devices for avionics applications
    Weulersse, C.
    Mazurek, M.
    Morand, S.
    Binois, C.
    Crepel, O.
    2020 20TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS 2020), 2022, : 122 - 126
  • [9] SiC devices for power and high-temperature applications
    Wondrak, W
    Niemann, E
    Kroetz, G
    Held, R
    Constapel, R
    IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS (ISIE 98) - PROCEEDINGS, VOLS 1 AND 2, 1998, : 153 - 156
  • [10] Recent advances in high-voltage SiC power devices
    Chow, TP
    Ramungul, N
    Ghezzo, M
    1998 HIGH-TEMPERATURE ELECTRONIC MATERIALS, DEVICES AND SENSORS CONFERENCE, 1998, : 55 - 67