Sequential operation of three distinct misfit dislocation introduction mechanisms in an epitaxial bilayer film

被引：0

|

作者：

Gopal, V. ^{[1
]}

Kvam, E.P. ^{[1
]}

Chen, E.-H. ^{[2
]}

Woodall, J.M. ^{[2
]}

机构：

[1] Purdue University, School of Materials Engineering, W. Lafayette, IN 47907, United States

[2] Yale University, Department of Electrical Engineering, New Haven, CT 06520., United States

来源：

Materials Research Society Symposium - Proceedings | 2000年 / 594卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Semiconducting films

引用

收藏

页码：157 / 162

相关论文

共 6 条

[1] Sequential operation of three distinct misfit dislocation introduction mechanisms in an epitaxial bilayer film
Gopal, V
Kvam, EP
Chen, EH
Woodall, JM
THIN FILMS-STRESSES AND MECHANICAL PROPERTIES VIII, 2000, 594 : 157 - 162
[2] Dislocation multiplication mechanisms in low-misfit strained epitaxial layers
1600, American Inst of Physics, Woodbury, NY, USA (77):
[3] DISLOCATION MULTIPLICATION MECHANISMS IN LOW-MISFIT STRAINED EPITAXIAL LAYERS
BEANLAND, R
JOURNAL OF APPLIED PHYSICS, 1995, 77 (12) : 6217 - 6222
[4] Effects of misfit dislocation and film-thickness on the residual stresses in epitaxial thin film systems: Experimental analysis and modeling
Liu, Mei
Ruan, Haihui
Zhang, Liangchi
Moridi, Alireza
JOURNAL OF MATERIALS RESEARCH, 2012, 27 (21) : 2737 - 2745
[5] Effects of misfit dislocation and film-thickness on the residual stresses in epitaxial thin film systems: Experimental analysis and modeling
Mei Liu
Haihui Ruan
Liangchi Zhang
Alireza Moridi
Journal of Materials Research, 2012, 27 : 2737 - 2745
[6] Nanoscale mechanisms of misfit dislocation propagation in undulated Si1-xGex/Si(100) epitaxial thin films
Wu, Chi-Chin
Stach, Eric A.
Hull, Robert
NANOTECHNOLOGY, 2007, 18 (16)