GaP RED LIGHT EMITTING DIODES BY ALLOYING TECHNIQUE.

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作者：
Purohit, R.K.
Mukherji, S.N.
Singh, Risal
Dubey, G.C.
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来源：
| 1600年 / 14期
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SEMICONDUCTING GALLIUM COMPOUNDS;
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摘要：
Single crystal platelets of p-type GaP were grown by the vertical Bridgeman technique for the fabrication of red light emitting diodes (LED's). The highest efficiency of 0. 02% was achieved in the case of un-encapsulated diodes obtained from crystals containing approximately 6 ppm Zn. To enhance the external quantum efficiency and to protect the delicate diodes from damage, the LED's were encapsulated with suitable epoxy hemispherical domes. An epoxy-hardener combination with transmittance 91% and refractive index 1. 6 has been formulated. 9 refs.
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