Environmental stability of 193 nm single layer chemically amplified resists

被引：0
|
作者：
机构：
来源：
J Vac Sci Technol B | / 1卷 / 101期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance
    Chen, Lan
    Goh, Yong-Keng
    Lawrie, Kirsten
    Smith, Bruce
    Montgomery, Warren
    Zimmerman, Paul
    Blakey, Idriss
    Whittaker, Andrew
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVII, PTS 1 AND 2, 2010, 7639
  • [22] Quantum yields of photoacid generation in 193-nm chemically amplified resists by fluorescence imaging spectroscopy
    Ray, K
    Mason, MD
    Grober, RD
    CHEMISTRY OF MATERIALS, 2004, 16 (26) : 5726 - 5730
  • [23] Polymer design for 157 nm chemically amplified resists
    Ito, H
    Wallraff, GM
    Brock, P
    Fender, N
    Truong, H
    Breyta, G
    Miller, DC
    Sherwood, MH
    Allen, RD
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2, 2001, 4345 : 273 - 284
  • [24] Environmental stability of chemically amplified resists: Proposing an industry standard methodology for testing
    Dean, K
    Kishkovich, O
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 : 284 - 293
  • [25] Design of chemically amplified resists:: From Frank!Houlihan's depolymerizable polycarbonates to today's cyclopolymerized 193 nm resists.
    Fréchet, JMJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2001, 221 : U376 - U376
  • [26] Limits to etch resistance for 193-nm single-layer resists
    Kunz, RR
    Palmateer, SC
    Forte, AR
    Allen, RD
    Wallraff, GM
    DiPietro, RA
    Hofer, DC
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIII, 1996, 2724 : 365 - 376
  • [27] Lithographic performance and optimization of chemically amplified single layer resists for EUV lithography
    Watanabe, T
    Kinoshita, H
    Miyafuji, A
    Irie, S
    Shirayone, S
    Mori, S
    Yano, E
    Hada, H
    Ohmori, K
    Komano, H
    EMERGING LITHOGRAPHIC TECHNOLOGIES IV, 2000, 3997 : 600 - 607
  • [28] CHEMICALLY AMPLIFIED RESISTS
    LAMOLA, AA
    SZMANDA, CR
    THACKERAY, JW
    SOLID STATE TECHNOLOGY, 1991, 34 (08) : 53 - 60
  • [29] Aliphatic platforms for the design of 157 nm chemically amplified resists
    Ito, H
    Truong, HD
    Okazaki, M
    Miller, DC
    Fender, N
    Breyta, G
    Brock, PJ
    Wallraff, GM
    Larson, CE
    Allen, RD
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2, 2002, 4690 : 18 - 28
  • [30] Minimization of the iso-dense bias in chemically amplified 193 nm positive resists: Influence and monitoring of the diffusion well
    Mortini, B
    Gally, S
    Sassoulas, PO
    Prola, A
    Paniez, PJ
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 : 74 - 90
12345