Environmental stability of 193 nm single layer chemically amplified resists

被引：0
|
作者：
机构：
来源：
J Vac Sci Technol B | / 1卷 / 101期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [11] Modeling chemically-amplified resists for 193nm lithography
    Croffie, E
    Cheng, MS
    Neureuther, A
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 : 171 - 180
  • [12] Investigation of environmental stability in chemically amplified resists
    Yoshino, H
    Itani, T
    Hashimoto, S
    Yamana, M
    Samoto, N
    Kasama, K
    Timko, AG
    Nalamasu, O
    MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) : 153 - 156
  • [13] SINGLE-LAYER CHEMICALLY AMPLIFIED PHOTORESISTS FOR 193-NM LITHOGRAPHY
    WALLRAFF, GM
    ALLEN, RD
    HINSBERG, WD
    LARSON, CF
    JOHNSON, RD
    DIPIETRO, R
    BREYTA, G
    HACKER, N
    KUNZ, RR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2783 - 2788
  • [14] Novel single-layer chemically amplified resist for 193-nm lithography
    Choi, SJ
    Kang, Y
    Jung, DW
    Park, CG
    Moon, JT
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 : 104 - 112
  • [15] Novel functional nortricyclene polymers and copolymers for 248 and 193 nm chemically amplified resists
    Niu, QJ
    Frechet, JMJ
    Okoroanyanwu, U
    Byers, JD
    Willson, CG
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 : 113 - 123
  • [16] Effects of polymer structure oil dissolution characteristics in chemically amplified 193nm resists
    Itani, T
    Yoshino, H
    Takizawa, M
    Yamana, M
    Tanabe, H
    Kasama, K
    MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 306 - 315
  • [17] Quantum yields of photoacid generation in 193 nm chemically amplified resists by imaging spectroscopy.
    Ray, K
    Mason, MD
    Grober, RD
    Pohlers, G
    Cameron, JF
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2003, 226 : U524 - U524
  • [18] 193-nm single layer resists based on advanced materials
    Shida, N
    Ushirogouchi, T
    Asakawa, K
    Funaki, Y
    Takaragi, A
    Tsutsumi, K
    Inoue, K
    Nakano, T
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2, 2001, 4345 : 87 - 93
  • [19] Optimization of 193 nm single layer resists through statistical design
    Gabor, AH
    Dimov, O
    Medina, AN
    Neisser, MO
    Slater, SG
    Wang, RH
    Houlihan, FM
    Cirelli, RA
    Dabbagh, G
    Hutton, RS
    Rushkin, IL
    Sweeney, JR
    Timko, AG
    Nalamasu, O
    Reichmanis, E
    MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 221 - 229
  • [20] The use of photoadditives in 248 nm and 193 nm chemically amplified resists: A retrospective of work done at Bell Laboratories.
    Houlihan, FM
    Nalamasu, O
    Reichmanis, E
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1999, 217 : U427 - U427
12345