共 50 条
- [1] Environmental stability of 193 nm single layer chemically amplified resists JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (01): : 101 - 108
- [2] Environmental stability of 193-nm single layer chemically amplified resists NEC RESEARCH & DEVELOPMENT, 1999, 40 (03): : 345 - 349
- [3] Environmental stability of 193-nm single layer chemically amplified resists NEC Res Dev, 3 (345-349):
- [4] Photoacid structure effects on environmental stability of 193 nm chemically amplified positive resists Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 B (7099-7102):
- [5] Photoacid structure effects on environmental stability of 193 nm chemically amplified positive resists JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12B): : 7099 - 7102
- [6] Dissolution characteristics of chemically amplified 193 nm resists JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 3726 - 3729
- [7] Dissolution inhibitors for 193-nm chemically amplified resists Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 B (7625-7631):
- [8] Dissolution inhibitors for 193-nm chemically amplified resists JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12B): : 7625 - 7631
- [9] Non-chemically amplified resists for 193 nm lithography ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923
- [10] Acid amplification of chemically amplified resists for 193nm lithography ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 : 76 - 82