LINEAR PHOTOGALVANIC EFFECT IN p-TYPE III-V SEMICONDUCTORS. SHIFT CONTRIBUTION.

被引：0

作者：

Ivchenko, E.L. ^{[1
]}

Pikus, G.E. ^{[1
]}

Rasulov, R.Ya. ^{[1
]}

机构：

[1] Acad of Sciences of the USSR, A. F., Ioffe Physicotechnical Inst,, Leningrad, USSR, Acad of Sciences of the USSR, A. F. Ioffe Physicotechnical Inst, Leningrad, USSR

来源：

Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela) | 1984年 / 26卷 / 11期

关键词：

PHONONS - PHOTOVOLTAIC EFFECTS;

D O I：

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摘要：

The shift contribution to the linear photogalvanic effect in semiconductors with a degenerate band is calculated. The contribution considered (shift phonon contribution) has the following origin: a) the distribution function of holes acquires a correction which is anisotropic and even in the wave vector when direct optical transitions occur between heavy- and light-hole subbands; b) the subsequent absorption or emission of an optical phonon by a hole (including the effect of asymmetry of the electron-phonon interaction in noncentrosymmetric crystals) leads to a shift of the hole in r-space and such a shift averaged over the wave vector is nonzero because of the anisotropy of the nonequilibrium distribution function of holes. The effect of a classical magnetic field on the shift photocurrent is analyzed.

引用

页码：2020 / 2024