Transient photoconductivity in GaInAs/InP MQW

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作者：

Univ of Essex, Essex, United Kingdom ^{[1
]}

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来源：

Semicond Sci Technol | / 6卷 / 829-834期

关键词：

Absorption - Carrier concentration - Charge carriers - Current voltage characteristics - Excitons - Heterojunctions - Mathematical models - Molecular beam epitaxy - Photoconductivity - Photons - Semiconducting gallium compounds - Semiconducting indium phosphide;

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摘要：

Transient photoconductivity in nominally undoped (n-type background doping) Ga0.47In0.53As/InP multiquantum well heterostructures is reported. The observed responses exhibited an initial fast decay followed by a much slower subsequent decay. The slow decay was consistent with a kinetic radiative recombination model which included free carriers, excitons and photon recycling. A model describing the fast initial decay is presented in terms of fast barrier radiative recombination. A comparison between the experimental results and the model shows good agreement.

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