Clustering and transient enhanced diffusion of B doping superlattices in silicon

被引：0
|
作者：
Uematsu, Masashi [1 ]
机构：
[1] NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 08期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：4718 / 4719
相关论文
共 50 条
  • [1] Clustering and transient enhanced diffusion of B doping superlattices in silicon
    Uematsu, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (08): : 4718 - 4719
  • [2] Using doping superlattices to study transient-enhanced diffusion of boron in regrown silicon
    Jones, KS
    Elliman, RG
    Petravic, MM
    Kringhoj, P
    APPLIED PHYSICS LETTERS, 1996, 68 (22) : 3111 - 3113
  • [3] Using doping superlattices to study transient-enhanced diffusion of boron in regrown silicon
    Appl Phys Lett, 22 (3111):
  • [4] Simulation of clustering and transient enhanced diffusion of boron in silicon
    Uematsu, M
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) : 4781 - 4787
  • [5] Effects of phosphorus doping on boron transient enhanced diffusion in silicon
    Huang, MB
    Simpson, TW
    Mitchell, IV
    APPLIED PHYSICS LETTERS, 1997, 70 (09) : 1146 - 1148
  • [6] Effects of interstitial clustering on transient enhanced diffusion of Boron in silicon
    Solmi, S
    Valmorri, S
    MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 95 - 100
  • [7] Atomistic model of transient enhanced diffusion and clustering of boron in silicon
    Pelaz, L
    Gilmer, GH
    Jaraiz, M
    Gossmann, HJ
    Rafferty, CS
    Eaglesham, DJ
    Poate, JM
    DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 341 - 346
  • [8] Effects of interstitial clustering on transient enhanced diffusion of boron in silicon
    Solmi, S
    Valmorri, S
    MICROSTRUCTURE EVOLUTION DURING IRRADIATION, 1997, 439 : 65 - 70
  • [9] ENHANCED HOLE MOBILITIES IN SILICON DOPING SUPERLATTICES
    BISWAS, R
    SMITH, D
    HOUGHTON, R
    POWELL, TG
    PARKER, EHC
    WHALL, TE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C547 - C547
  • [10] ANTIMONY IMPLANTATION INTO SI-B DOPING SUPERLATTICES - DAMAGE AND ENHANCED DIFFUSION
    KRUGER, D
    JAGDHOLD, U
    KURPS, R
    ZEINDL, HP
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (08) : 5008 - 5012
12345