Novel sidewall strained-Si channel nMOSFET

被引：0
|
作者：
Liu, K.C. [1 ]
Wang, X. [1 ]
Quinones, E. [1 ]
Chen, X. [1 ]
Chen, X.D. [1 ]
Kencke, D. [1 ]
Anantharam, B. [1 ]
Ray, S.K. [1 ]
Oswal, S.K. [1 ]
Banerjee, S.K. [1 ]
机构：
[1] Univ of Texas at Austin, Austin, United States
来源：
Annual Device Research Conference Digest | 1999年
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页码：180 / 181
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