Growth of high-quality epitaxial ZnO films on α-Al2O3

被引：0
|
作者：
Fons, P. [1 ]
Iwata, K. [1 ]
Niki, S. [1 ]
Yamada, A. [1 ]
Matsubara, K. [1 ]
机构：
[1] Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305, Ibaraki, Japan
来源：
Journal of Crystal Growth | 1999年 / 201卷
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页码：627 / 632
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