Tunable mid-IR diode lasers based on InGaAsSb/InAsSbP DH

被引：0
|
作者：
Zotova, N.V. [1 ]
Karandashov, S.A. [1 ]
Matveev, B.A. [1 ]
Stus', N.M. [1 ]
Talalakin, G.N. [1 ]
Remennyi, M.A. [1 ]
机构：
[1] A.F. Ioffe Physico-Technical Inst, RAS, St. Petersburg, Russia
来源：
Spectrochimica Acta - Part A Molecular Spectroscopy | 1996年 / 52 A卷 / 08期
关键词：
Chemical sensors - Epitaxial growth - Fiber optic sensors - Heterojunctions - Infrared spectroscopy - Laser applications - Laser tuning - Semiconducting gallium arsenide - Semiconducting indium compounds;
D O I：
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中图分类号：
学科分类号：
摘要：
Recently developed mid-infrared diode lasers based on III-V compounds can be used as an alternative to lead-salt lasers for operation at cryogenic temperatures in the 3-3.6 μm range due to high power output and stability against moisture. This paper describes properties of InAs, InGaAsSb and InAsSb based double heterostructure diode lasers fabricated by liquid phase epitaxy on InAs substrates. Tunability with CW current (9 cm-1 A-1) and temperature (80 nm per 60 K) are discussed together with the model for optical transitions in InAs/InAsSbP and InGaAsSb/InAsSbP double heterostructures, respectively. One of the first application of these lasers in a fibre optic methane gas sensor is described.
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页码：857 / 862
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