Indium tin oxide dry etching using HBr gas for thin-film transistor liquid crystal displays

被引：0
|
作者：
机构：
[1] Takabatake, Masaru
[2] Wakui, Youkou
[3] Konishi, Nobutake
来源：
Takabatake, Masaru | 1600年 / Electrochemical Soc Inc, Pennington, NJ, United States卷 / 142期
关键词：
Thin film transistors;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] INDIUM TIN OXIDE DRY-ETCHING USING HBR GAS FOR THIN-FILM-TRANSISTOR LIQUID-CRYSTAL DISPLAYS
    TAKABATAKE, M
    WAKUI, Y
    KONISHI, N
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (07) : 2470 - 2473
  • [2] Fabrication of Indium-Tin-Oxide Thin-Film Transistor Using Anodization
    Xie, Lei
    Shao, Yang
    Xiao, Xiang
    Zhang, Letao
    Bi, Xiaobin
    Zhang, Shengdong
    2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2014, : 101 - 103
  • [3] Contact resistivity between an Al metal line and an indium tin oxide line of thin film transistor liquid crystal displays
    Lee, HN
    Park, JC
    Kim, HJ
    Lee, WG
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2A): : 791 - 794
  • [4] Contact resistivity between an Al metal line and an indium tin oxide line of thin film transistor liquid crystal displays
    Lee, Ho-Nyeon
    Park, Jae-Chel
    Kim, Hyun-Jin
    Lee, Won-Geon
    Lee, H.-N. (hnlee1@hananet.net), 1600, Japan Society of Applied Physics (41): : 791 - 794
  • [5] Indium-tin oxide/Si contacts with In- and Sn-diffusion barriers in polycrystalline Si thin-film transistor liquid-crystal displays
    Ryu, H
    Kang, J
    Han, Y
    Kim, D
    Pak, JJ
    Park, WK
    Yang, MS
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (09) : 919 - 924
  • [6] Indium-tin oxide/Si contacts with In- and Sn-diffusion barriers in polycrystalline Si thin-film transistor liquid-crystal displays
    Hojin Ryu
    Jinmo Kang
    Younggun Han
    Donghwan Kim
    James Jungho Pak
    Won-Kyu Park
    Myoung-Su Yang
    Journal of Electronic Materials, 2003, 32 : 919 - 924
  • [7] ELIMINATING CROSSTALK IN THIN-FILM TRANSISTOR LIQUID-CRYSTAL DISPLAYS
    HOWARD, WE
    ALT, PM
    WISNIEFF, RL
    PROCEEDINGS OF THE SID, 1989, 30 (02): : 147 - 151
  • [8] ELIMINATING CROSSTALK IN THIN-FILM TRANSISTOR LIQUID-CRYSTAL DISPLAYS
    HOWARD, WE
    ALT, PM
    WISNIEFF, RL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) : 1938 - 1942
  • [9] Mobility enhancement of tin oxide thin-film transistor by indium-doping
    Wei, Ya-Fen
    Zhang, Tao
    Wu, Jia-Jie
    Li, Tie-Jun
    Lin, Dong
    VACUUM, 2024, 221
  • [10] Practical properties of indium zinc oxide for thin-film-transistor liquid-crystal displays.
    Kaijo, A
    Inoue, K
    Matsuzaki, S
    Shigesato, Y
    PRICM 4: FORTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, VOLS I AND II, 2001, : 1787 - 1790
12345