GALVANOMAGNETIC PROPERTIES OF COMPENSATED n-TYPE InAs.

被引：0

作者：

Garyagdyev, G.

Emel'yanenko, O.V.

Zotova, N.V.

Lagunova, T.S.

Nasledov, D.N.

Pentsov, A.V.

机构：

来源：

Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1974年 / 8卷 / 02期

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摘要：

SEMICONDUCTING INDIUM COMPOUNDS

引用

页码：214 / 218

共 17 条

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