Step control of vicinal 6H-SiC(0001) surface by H2 etching

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作者：
Nakajima, A. [1 ]
Yokoya, H. [1 ]
Furukawa, Y. [1 ]
Yonezu, H. [1 ]
机构：
[1] Department of Electrical and Electronic Engineering, Toyohashi University of Technology, l-1 Hibarigaoka, Toyohashi, Aichi, 441-8580, Japan
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| 1600年 / American Institute of Physics Inc.卷 / 97期
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Number:; -; Acronym:; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology;
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