Band structure calculations of Ga(1-x)AlxAs, GaAs(1-x)Px and AlAs under pressure

被引:0
|
作者
University of Sidi-Bel-Abbes, Sidi-Bel-Abbes, Algeria [1 ]
机构
来源
Comput Mater Sci | / 3卷 / 393-401期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] VARIBAND GAAS(1-X)PX - A MATERIAL FOR PRESSURE SENSORS
    GRIDCHIN, VA
    PUCKLYAKOV, YA
    SHURMAN, LB
    SENSORS AND ACTUATORS A-PHYSICAL, 1992, 30 (1-2) : 139 - 142
  • [2] Ga(1-x)AlxAs/GaAs量子阱束缚能级的计算
    康宁
    王迎春
    甘肃科学(甘肃省科学院学报), 1991, (01) : 55 - 59
  • [3] EXCITON BINDING-ENERGY IN SMALL-PERIOD GAAS/GA(1-X)ALXAS SUPERLATTICES
    CHOMETTE, A
    LAMBERT, B
    DEVEAUD, B
    CLEROT, F
    REGRENY, A
    BASTARD, G
    EUROPHYSICS LETTERS, 1987, 4 (04): : 461 - 466
  • [4] VALENCE-BAND STRUCTURE CALCULATIONS OF GAAS/GA(X)IN(1-X)P STRAINED-LAYER QUANTUM-WELLS
    ZITOUNI, K
    RERBAL, K
    KADRI, A
    SUPERLATTICES AND MICROSTRUCTURES, 1993, 13 (03) : 347 - 351
  • [5] IMPURITY ENERGY-LEVELS FOR SE AND ZN IN GA(1-X)ALXAS
    YANG, JJ
    SIMPSON, WI
    MOUDY, LA
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 125 - 130
  • [6] A TEST OF VEGARDS LAW IN GAAS (1-X)PX ALLOYS
    JONES, VO
    REHN, V
    KYSER, DS
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 392 - &
  • [7] EPITAXIAL GROWTH OF GAAS 1-X PX ON GERMANIUM SUBSTRATES
    BURMEIST.RA
    REGEHR, RW
    TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1969, 245 (03): : 565 - &
  • [8] IMPROVED TRIPLE RESONANT TUNNELING DIODES USING IN(X)GA(1-X)AS/GAAS/ALAS STRAINED LAYERS
    LIPPENS, D
    NAGLE, J
    GRIMBERT, B
    SADAUNE, V
    LHEURETTE, E
    VINTER, B
    TILMANT, P
    FRANCOIS, M
    MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 879 - 882
  • [9] 掺Ge的p型Ga(1-x)AlxAs缺陷能级
    王绍渤
    吴瑞娣
    仪表材料, 1983, (05) : 58 - 61
  • [10] ELECTRICAL-PROPERTIES OF SE AND ZN IN MO-CVD GA(1-X)ALXAS
    YANG, JJ
    SIMPSON, WI
    MOUDY, LA
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 107 - 112