HIGH-POWER GaAs FET SHATTERS X-BAND 1W BARRIER.

被引：0
|
作者：
Fukuta, Masumi
机构：
来源：
JEE, Journal of Electronic Engineering | 1975年 / 103期
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中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
A GaAs FET that has broken the X-band 1-watt barrier has been developed. It comprises 53 interdigitated sources, 52 drains and 104 Schottky gates, with crossover electrodes which connect all the gates in parallel. The gate length is 1. 5 mu m and the total gate width is 5,200 mu m. A ″sheet-grounding″ technique has been developed to reduce the ground-lead inductance. From this FET it is possible to obtain a saturation output of 1. 6w up to 8 GHz, and 0. 7w up to 10 GHz.
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页码：32 / 35
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