MEASURING ELECTRICAL CHARACTERISTICS OF SILICON.

被引：0
作者：
Christ, Michael H.
Moore Sr., George E.
机构：
来源：
| 1600年 / 17期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING SILICON
引用
收藏
相关论文
共 50 条
[41]   EFFECT OF LIGHT SOAKING ON THE LOW TEMPERATURE PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS SILICON. [J].
Vanier, P.E. .
Solar Cells: Their Science, Technology, Applications and Economics, 1982, 9 (1-2) :85-93
[42]   DIRECTIONAL DISTRIBUTION OF BURGERS VECTORS OF DISLOCATION LOOPS IN ION-IMPLANTED SILICON. [J].
Komarov, F.F. ;
Solovev, V.S. ;
Shiryaev, S.YU. .
Radiation effects letters, 1981, 58 (06) :177-181
[43]   PRODUCTION OF HIGH CHROMIUM ALLOYS TiC-Fe-Cr ALLOYED WITH SILICON. [J].
Kyubarsepp, Ya.P. .
Soviet powder metallurgy and metal ceramics, 1986, 25 (05)
[44]   Utilization of the Neutron Activation Analysis to the Determination of Thickness of Electrolytic Selenium Layers on Silicon. [J].
Golanski, Andrzej .
1600, (13)
[45]   X-RAY SPECTROSCOPIC STUDY OF THE DISTRIBUTION OF GERMANIUM IONS IMPLANTED IN SILICON. [J].
SAL'MAN, V.M. ;
KISELEVA, K.V. ;
KRASNOPEVTSEV, V.V. ;
KHUSAINOV, R.SH. .
1981, (N 7) :14-17
[46]   INVESTIGATION OF S-TYPE DIODES MADE OF RHODIUM-DOPED SILICON. [J].
Azimov, S.A. ;
Karimov, F.R. ;
Lebedev, A.A. ;
Mamadalimov, A.T. ;
Yunusov, M.S. .
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (12) :1537-1539
[47]   INFLUENCE OF THE CHARGE STATE OF PRIMARY DEFECTS ON THE FORMATION OF COMPLEXES IN n-TYPE SILICON. [J].
Gubskaya, V.I. ;
Kuchinskii, P.V. ;
Lomako, V.M. .
Soviet physics. Semiconductors, 1980, 14 (02) :189-191
[48]   Effects of changing partial cell shading on the electrical and thermal characteristics of crystalline silicon photovoltaic module [J].
Vumbugwa, M. ;
Vorster, F.J. ;
Crozier McCleland, J.L. ;
van Dyk, E.E. .
Solar Energy, 2022, 240 :147-156
[49]   Contribution to the Thermodynamics of Iron Carbon Silicon Melts - 1. The C-Si Isotherms in Their Relation to the Oxidation Behavior of Carbon and Silicon. [J].
Neumann, Franz ;
Doetsch, Erwin .
Giessereiforschung, 1975, 27 (01) :31-38
[50]   MICROELECTRONIC TEST PATTERN NBS-3 FOR EVALUATING THE RESISTIVITY-DOPANT DENSITY RELATIONSHIP OF SILICON. [J].
Buehler, Martin G. .
1600, :400-22
12345