共 50 条
[32]
PRODUCTION AND SOME PROPERTIES OF PHOTOELEMENTS BASED ON LAYERS OF POLYCRYSTALLINE SILICON.
[J].
Applied Solar Energy (English translation of Geliotekhnika),
1982, 18 (04)
:13-16
[34]
Proposed Mass Concentration on Vaues for Dusts Containing Free Silicon.
[J].
Staub, Reinhaltung der Luft,
1973, 33 (02)
:84-88
[35]
IMPURITY STATES OF IRON GROUP IONS IN GALLIUM ARSENIDE AND SILICON.
[J].
Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela),
1977, 19 (01)
:100-103
[36]
X-RAY TOPOGRAPHIC OBSERVATION OF SINGLE DISLOCATION MOBILITY IN SILICON.
[J].
Crystal Lattice Defects,
1973, 4 (01)
:29-36
[37]
HIGH TEMPERATURE OXIDATION RESISTANCE OF AUSTENITIC STAINLESS STEELS WITH HIGH SILICON.
[J].
Tetsu-To-Hagane/Journal of the Iron and Steel Institute of Japan,
1981, 67 (01)
:159-168
[38]
Recombination luminescence in irradiated silicon. Effects of thermal annealing and lithium impurity
[J].
Radiation Effects,
1971, 9 (1-2)
:89-92
[39]
Surface State of Compounds of d-Metals with Nitrogen, Boron and Silicon.
[J].
Neorganiceskie materialy,
1980, 16 (03)
:445-449
[40]
SPECTRAL DEPENDENCE OF THE PHOTON CAPTURE CROSS SECTIONS OF THE Au LEVELS IN SILICON.
[J].
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov),
1974, 8 (03)
:301-302