MEASURING ELECTRICAL CHARACTERISTICS OF SILICON.

被引：0

作者：

Christ, Michael H.

Moore Sr., George E.

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来源：

| 1600年 / 17期

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Compendex;

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摘要：

SEMICONDUCTING SILICON

引用

共 50 条

[21] INVESTIGATION OF SPIN-DEPENDENT RECOMBINATION AT DISLOCATIONS IN SILICON.
Kveder, V.V.
Osip'yan, Yu.A.
Shalynin, A.L.
Soviet physics. Semiconductors, 1982, 16 (08): : 932 - 933
[22] HIGH VOLTAGE ELECTRON MICROSCOPE STUDY OF DEFECTS IN SILICON.
Oshima, R.
Sadamitsu, S.
Fujita, F.E.
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 116 B&C (1-3): : 606 - 611
[23] ROLE OF INTERSTITIAL ATOMS IN FORMATION OF RADIATION DEFECTS IN SILICON.
Litvinko, A.G.
Murin, L.I.
Tkachev, V.D.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (06): : 644 - 647
[24] ION BOMBARDMENT ENHANCED MIXING OF SILVER LAYERS ON SILICON.
Newcombe, R.
Christodoulides, C.E.
Carter, G.
Tognetti, P.
Radiation effects letters, 1980, 50 (02): : 51 - 56
[25] DIFFUSION COEFFICIENT AND SOLID SOLUBILITY OF ELECTRICALLY ACTIVE COBALT IN SILICON.
Tomokage, Hajime
Kitagawa, Hajime
Hashimoto, Kimio
Memoirs of the Kyushu University, Faculty of Engineering, 1981, 41 (01): : 59 - 63
[26] KINETICS OF ACCUMULATION OF RADIATION DAMAGE DURING ION IMPLANTATION OF SILICON.
Vavilov, V.S.
Krasnopevtsev, V.V.
Kudyshev, A.N.
Soviet physics. Semiconductors, 1982, 16 (08): : 892 - 895
[27] STUDY OF THE BEHAVIOUR OF ″HYDROGEN-DEFECTS COMPLEX″ DONOR IN SILICON.
Wang Zhengyuan
Lin Lanying
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1982, 3 (06): : 440 - 449
[28] ORIGIN OF THE PHOTO-INDUCED CHANGES IN HYDROGENATED AMORPHOUS SILICON.
Adler, David
Solar Cells: Their Science, Technology, Applications and Economics, 1982, 9 (1-2): : 133 - 148
[29] SPECTROSCOPIC STUDIES OF 450 degree C THERMAL DONORS IN SILICON.
Pajot, B.
Compain, H.
Lerouille, J.
Clerjaud, B.
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 110 - 112
[30] PRELIMINARY STUDY ON THE ELECTRONIC STRUCTURE OF HYDROGENATED AND FLUORINATED AMORPHOUS SILICON.
Jiang Ping
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1983, 4 (02): : 133 - 141

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