共 50 条
[21]
INVESTIGATION OF SPIN-DEPENDENT RECOMBINATION AT DISLOCATIONS IN SILICON.
[J].
Soviet physics. Semiconductors,
1982, 16 (08)
:932-933
[22]
HIGH VOLTAGE ELECTRON MICROSCOPE STUDY OF DEFECTS IN SILICON.
[J].
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics,
1982, 116 B&C (1-3)
:606-611
[23]
ROLE OF INTERSTITIAL ATOMS IN FORMATION OF RADIATION DEFECTS IN SILICON.
[J].
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov),
1976, 10 (06)
:644-647
[24]
ION BOMBARDMENT ENHANCED MIXING OF SILVER LAYERS ON SILICON.
[J].
Radiation effects letters,
1980, 50 (02)
:51-56
[25]
DIFFUSION COEFFICIENT AND SOLID SOLUBILITY OF ELECTRICALLY ACTIVE COBALT IN SILICON.
[J].
Memoirs of the Kyushu University, Faculty of Engineering,
1981, 41 (01)
:59-63
[26]
KINETICS OF ACCUMULATION OF RADIATION DAMAGE DURING ION IMPLANTATION OF SILICON.
[J].
Soviet physics. Semiconductors,
1982, 16 (08)
:892-895
[27]
STUDY OF THE BEHAVIOUR OF ″HYDROGEN-DEFECTS COMPLEX″ DONOR IN SILICON.
[J].
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,
1982, 3 (06)
:440-449
[28]
PRELIMINARY STUDY ON THE ELECTRONIC STRUCTURE OF HYDROGENATED AND FLUORINATED AMORPHOUS SILICON.
[J].
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,
1983, 4 (02)
:133-141
[29]
SPECTROSCOPIC STUDIES OF 450 degree C THERMAL DONORS IN SILICON.
[J].
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics,
1982, 117-118 (Pt I)
:110-112
[30]
ORIGIN OF THE PHOTO-INDUCED CHANGES IN HYDROGENATED AMORPHOUS SILICON.
[J].
Solar Cells: Their Science, Technology, Applications and Economics,
1982, 9 (1-2)
:133-148