Study of microstructure in SrTiO3/Si by high-resolution transmission electron microscopy

被引：0
|
作者：
Yang, G.Y. [1 ]
Finder, J.M. [1 ]
Wang, J. [1 ]
Wang, Z.L. [1 ]
Yu, Z. [1 ]
Ramdani, J. [1 ]
Droopad, R. [1 ]
Eisenbeiser, K.W. [1 ]
Ramesh, R. [1 ]
机构：
[1] Materials Res. Sci. and Eng. Center, University of Maryland, College Park, MD 20742, United States
来源：
| 2002年 / Materials Research Society卷 / 17期
关键词：
Computer simulation - Crystal lattices - Crystal microstructure - Dislocations (crystals) - Epitaxial growth - High resolution electron microscopy - Image analysis - Interfaces (materials) - Silicon - Substrates - Thin films - Transmission electron microscopy;
D O I：
10.1557/jmr.2002.0030
中图分类号：
学科分类号：
摘要：
Microstructure in the SrTiO3/Si system has been studied using high-resolution transmission electron microscopy and image simulations. SrTiO3 grows heteroepitaxially on Si with the orientation relationship given by (001)STO//(001)Si and [100]STO//[110]Si. The lattice misfit between the SrTiO3 thin films and the Si substrate is accommodated by the presence of interfacial dislocations at the Si substrate side. The interface most likely consists of Si bonded to O in SrTiO3. The alternative presentation of Sr and Si atoms along the interface leads to the formation of 2× and 3× Sr configurations. Structural defects in the SrTiO3 thin film mainly consist of tilted domains and dislocations.
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