Luminescence and crystallinity of sputtered ZnS:TbF thin films

被引：0

作者：

Ohnishi, H. ^{[1
]}

Watanabe, M. ^{[1
]}

Yamamoto, R. ^{[1
]}

Okuda, T. ^{[1
]}

Ibuki, S. ^{[1
]}

机构：

[1] Ehime Univ, Ehime, Japan

来源：

Proceedings of the SID | 1991年 / 32卷 / 03期

关键词：

Crystallinity - Green-emitting thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A study was made on the effect of gas pressure during sputtering on the luminescence and crystallinity of green-emitting ZnS:TbF thin films grown in a gas mixture of 60% argon and 40% helium. The photoluminescence (PL) intensity under the illumination of an argon laser with the 488-nm line, which means that the direct excitation of the Tb centers and the direct-current electroluminescence (DCEL) efficiency are found to be maximum at 3.5 Pa, gives the best crystallinity for ZnS:TbF film. The host-excited PL intensity under the illumination of-a helium-cadmium laser with the 325-nm line increases with increasing gas pressure while the alternating current EL (ACEL) has a maximum efficiency of 1 lurn/W at 5 Pa. The host-excited PL intensity is stronger than the PL intensity under the argon-laser excitation, and the ACEL efficiency is higher than for DCEL. These results suggest that in an ACEL device based on a ZnS:TbF active layer, the host excitation and energy transfer from the host to the Tb center play an important role, in addition to the direct impact excitation of Tb centers by hot electrons.

引用

页码：223 / 227