Quantum wire and box lasers. Next generation high performance semiconductor lasers

被引：0

作者：

Zhang, Hansan ^{[1
]}

机构：

[1] Hebei Semiconductor Research Inst, Shijiazhuang, China

来源：

Jiguang Yu Hongwai/Laser and Infrared | 1992年 / 22卷 / 05期

关键词：

Quantum electronics;

D O I：

暂无

中图分类号：

TN248.4 [半导体激光器];

学科分类号：

摘要：

This paper discussed the lasing characteristics of quantum wire and box lasers, showing extremely low threshold current, enhanced modulation bandwidth and narrow spectral linewidth. The fabrication technology of quantum size structures, effects of the size fluctuation and nonlinear gain on lasing characteristics were discussed. Finally the new concept of quantum micro laser was given.

引用

页码：5 / 8