Growth of nanoscale Si nuclei on SiO2 by rapid thermal chemical vapor deposition

被引：0
|
作者：
Dept. d'Enginyeria Electronica, Univ. Autònoma de Barcelona, 08193 Bellaterra, Barcelona, Spain [1 ]
不详 [2 ]
机构：
来源：
J Electrochem Soc | / 11卷 / 4219-4225期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Semiconducting films
引用
收藏
相关论文
共 50 条
  • [1] Growth of nanoscale si nuclei on SiO2 by rapid thermal chemical vapor deposition
    Vizoso, J
    Martín, F
    Martínez, X
    Garriga, M
    Aymerich, X
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (11) : 4219 - 4225
  • [2] Electroluminescence properties of nanocrystal Si/SiO2 superlattices grown by rapid thermal chemical vapor deposition
    Kaang, JH
    Kim, YD
    Cha, KM
    Cheong, HJ
    Kim, Y
    Yi, JY
    Bark, HJ
    Chung, TH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (04) : 1065 - 1068
  • [3] Thermal annealing of Si+ implanted chemical vapor deposition SiO2
    Zheng, XQ
    Liao, LS
    Yan, F
    Bao, XM
    Wang, W
    CHINESE PHYSICS LETTERS, 1996, 13 (05) : 397 - 400
  • [4] VAPOR DEPOSITION OF SIO2 ON SI
    MACKENNA, EL
    LEGAT, WH
    COX, WP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : C63 - &
  • [5] Graphene Growth Directly on SiO2/Si by Hot Filament Chemical Vapor Deposition
    Rodriguez-Villanueva, Sandra
    Mendoza, Frank
    Instan, Alvaro A.
    Katiyar, Ram S.
    Weiner, Brad R.
    Morell, Gerardo
    NANOMATERIALS, 2022, 12 (01)
  • [6] Growth of a Ge Layer on a Si/SiO2/Si(100) Structure by the Hot Wire Chemical Vapor Deposition
    Sushkov, A. A.
    Pavlov, D. A.
    Denisov, S. A.
    Chalkov, V. Yu
    Kryukov, R. N.
    Pitirimova, E. A.
    SEMICONDUCTORS, 2020, 54 (10) : 1332 - 1335
  • [7] Growth of a Ge Layer on a Si/SiO2/Si(100) Structure by the Hot Wire Chemical Vapor Deposition
    A. A. Sushkov
    D. A. Pavlov
    S. A. Denisov
    V. Yu. Chalkov
    R. N. Kryukov
    E. A. Pitirimova
    Semiconductors, 2020, 54 : 1332 - 1335
  • [8] Rapid thermal chemical vapor deposition of polycrystalline silicon-germanium films on SiO2 and their properties
    Li, VZQ
    Mirabedini, MR
    Kuehn, RT
    Gladden, D
    Batchelor, D
    Christenson, K
    Wortman, JJ
    Ozturk, MC
    Maher, DM
    POLYCRYSTALLINE THIN FILMS: STRUCTURE, TEXTURE, PROPERTIES, AND APPLICATIONS II, 1996, 403 : 333 - 338
  • [9] CHEMICAL VAPOR-DEPOSITION OF COPPER ON SI(111) AND SIO2 SUBSTRATES
    LAMPEONNERUD, C
    JANSSON, U
    HARSTA, A
    CARLSSON, JO
    JOURNAL OF CRYSTAL GROWTH, 1992, 121 (1-2) : 223 - 234
  • [10] Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition
    Cheng, Yingchun
    Yao, Kexin
    Yang, Yang
    Li, Liang
    Yao, Yingbang
    Wang, Qingxiao
    Zhang, Xixiang
    Han, Yu
    Schwingenschloegl, Udo
    RSC ADVANCES, 2013, 3 (38) : 17287 - 17293
12345