(NH4)2Sx-treated InP(001) studied by high-resolution x-ray photoelectron spectroscopy

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作者：
机构：
[1] Fukuda, Y.
[2] Suzuki, Y.
[3] Sanada, N.
[4] Sasaki, S.
[5] Ohsawa, T.
来源：
Fukuda, Y. | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 76期
关键词：
Annealing - Electron energy levels - Mathematical models - Photoelectron spectroscopy - Semiconducting indium compounds - Stability - Sulfur - Surfaces;
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摘要：
In this paper, described is the chemical state and stability of sulfur on the (NH4)2Sx-treated InP(001) surface. X-ray photoelectron microscopy (XPS) measurements were carried out using a high resolution spectrometer with a monochromatized Al Kα eV. The measurements were performed at 80° off the normal to the surface to probe the top surface.
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