X-RAY SPECTROSCOPIC STUDY OF THE DISTRIBUTION OF GERMANIUM IONS IMPLANTED IN SILICON.

被引：0
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作者：
SAL'MAN, V.M.
KISELEVA, K.V.
KRASNOPEVTSEV, V.V.
KHUSAINOV, R.SH.
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来源：
| 1981年 / N 7期
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摘要：
SEMICONDUCTING SILICON - ION IMPLANTATION
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页码：14 / 17
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