X-RAY SPECTROSCOPIC STUDY OF THE DISTRIBUTION OF GERMANIUM IONS IMPLANTED IN SILICON.

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作者：

SAL'MAN, V.M.

KISELEVA, K.V.

KRASNOPEVTSEV, V.V.

KHUSAINOV, R.SH.

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| 1981年 / N 7期

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摘要：

SEMICONDUCTING SILICON - ION IMPLANTATION

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页码：14 / 17

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