IMPURITY PROFILE IN TIN DOPED GaAs EPITAXIAL LAYERS.

被引：0

作者：

Stareev, G.

Andrelowicz, M.

Piskorski, M.

机构：

来源：

Electron Technology (Warsaw) | 1973年 / 6卷 / 1-2期

关键词：

GALLIUM ARSENIDE;

D O I：

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学科分类号：

摘要：

A method for preparing tin doped GaAs epitaxial layers from liquid phase is described. The impurity concentration in the layer was measured by the differential capacitance Schottky-barrier method. The dependence of the impurity concentration on the atomic percentage of tin in the melt, and of the impurity concentration in depth were measured for various doping levels and compared with the existing data.

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页码：125 / 134