SUBPICOSECOND BASE TRANSIT TIME OBSERVED IN A HOT-ELECTRON TRANSISTOR (HET).

被引：0

作者：

Muto, S. ^{[1
]}

Imamura, K. ^{[1
]}

Yokoyama, N. ^{[1
]}

Hiyamizu, S. ^{[1
]}

Nishi, H. ^{[1
]}

机构：

[1] Fujitsu Ltd, Atsugi, Jpn, Fujitsu Ltd, Atsugi, Jpn

来源：

Electronics Letters | 1985年 / 21卷 / 13期

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摘要：

It has been found that the transverse magnetic field drastically reduces the current gain of an AlGaAs/GaAs hot-electron transistor (HET) at 4. 2 K. The result can be understood in terms of the cyclotron motion of hot electrons within the base layer (1000 A thick). Estimated subpicosecond base transit time confirms the quasiballistic transport of hot electrons across the base layer of the HET.

引用

页码：555 / 556