Hydrogen effects on the electrical and optical properties of γ-irradiated n-type GaAs epilayers

被引：0
作者：
机构：
来源：
Nucl Instrum Methods Phys Res Sect B | / 1-2卷 / 65期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Hydrogen effects on the electrical and optical properties of gamma-irradiated n-type GaAs epilayers
    Ulyashin, AG
    Bumai, YA
    Shlopak, NV
    Sobolev, NA
    Prokhorenko, TA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 108 (1-2) : 65 - 69
  • [2] HYDROGEN EFFECTS ON THE ELECTRICAL-PROPERTIES OF ELECTRON-IRRADIATED N-TYPE SI EPILAYERS
    SHLOPAK, NV
    ULYASHIN, AG
    BUMAI, YA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 86 (3-4) : 298 - 302
  • [3] CHARACTERIZATION OF MATERIAL AND OPTICAL EFFECTS IN ANNEALED, PROTON IRRADIATED N-TYPE GAAS
    ZAVADA, JM
    JENKINSON, HA
    SARKIS, RG
    WILSON, RG
    SADANA, DK
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 530 : 182 - 187
  • [4] CHARACTERIZATION OF N-TYPE GAAS EPILAYERS ON SEMIINSULATING GAAS SUBSTRATES
    BOTHA, AF
    ENGELBRECHT, JAA
    WATTERS, VJ
    SOUTH AFRICAN JOURNAL OF SCIENCE, 1991, 87 (09) : 453 - 456
  • [5] Electrical transport properties of highly doped N-type GaN epilayers
    Lee, HJ
    Cheong, MG
    Suh, EK
    Razeghi, M
    PHOTODETECTORS: MATERIALS AND DEVICES III, 1998, 3287 : 321 - 326
  • [6] ELECTRICAL PROPERTIES OF EPITAXIAL FILMS OF N-TYPE GAAS
    DVORYANKIN, VF
    TELEGIN, AA
    NEDEOGLO, DD
    NASLEDOV, DN
    EMELYANE.OV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (10): : 1636 - +
  • [7] Optical properties of nominally undoped n-type MOVPE GaN epilayers
    Kudrawiec, R
    Misiewicz, J
    Paszkiewicz, R
    Paszkiewicz, B
    Tlaczala, M
    OPTICA APPLICATA, 2002, 32 (03) : 381 - 388
  • [8] ELECTRICAL PROPERTIES OF EPITXIAL FILMS OF n-TYPE GaAs.
    Dvoryankin, V.N.
    Emel'yanenko, O.V.
    Nasledov, D.N.
    Nedeoglo, D.D.
    Telegin, A.A.
    1636, (05):
  • [9] p- and n-type cubic GaN epilayers on GaAs
    As, DJ
    Schikora, D
    Greiner, A
    Lubbers, M
    Mimkes, J
    Lischka, K
    PHYSICAL REVIEW B, 1996, 54 (16): : 11118 - 11121
  • [10] Electrical and optical properties of ZnSe: N epilayers
    Joh, YS
    Kim, YG
    Song, JH
    Sim, ED
    Baek, KS
    Chang, SK
    11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS, 2004, 1 (04): : 714 - 717
12345