Characteristics of a monodisperse PHS-based positive resist (MDPR) in KrF excimer laser lithography

被引：0
|
作者：
机构：
[1] Kawai, Yoshio
[2] Tanaka, Akinobu
[3] Matsuda, Tadahito
来源：
Kawai, Yoshio | 1600年 / 31期
关键词：
Photolithography;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] CHARACTERISTICS OF A MONODISPERSE PHS-BASED POSITIVE RESIST (MDPR) IN KRF EXCIMER LASER LITHOGRAPHY
    KAWAI, Y
    TANAKA, A
    MATSUDA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (12B): : 4316 - 4320
  • [2] Positive resist for KrF excimer laser lithography
    Park, SJ
    Kim, IH
    Kang, YJ
    Lee, H
    Lee, SH
    Choi, SJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (05): : 2108 - 2112
  • [3] A NEW POSITIVE RESIST FOR KRF EXCIMER LASER LITHOGRAPHY
    TANI, Y
    ENDO, M
    SASAGO, M
    OGAWA, K
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING VI, 1989, 1086 : 22 - 33
  • [4] New photobleachable positive resist for KrF excimer laser lithography
    Endo, Masayuki
    Tani, Yoshiyuki
    Sasago, Masaru
    Ogawa, Kazufumi
    Nomura, Noboru
    1600, (27):
  • [5] A NEW PHOTOBLEACHABLE POSITIVE RESIST FOR KRF EXCIMER LASER LITHOGRAPHY
    ENDO, M
    TANI, Y
    SASAGO, M
    OGAWA, K
    NOMURA, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2219 - L2222
  • [6] POSITIVE AND NEGATIVE CHEMICAL AMPLIFICATION RESIST SYSTEMS FOR KRF EXCIMER LASER LITHOGRAPHY
    HAYASHI, N
    UENO, T
    SHIRAISHI, H
    SCHLEGEL, L
    IWAYANAGI, T
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1991, 201 : 30 - PMSE
  • [7] AN ALKALINE-DEVELOPABLE POSITIVE RESIST BASED ON SILYLATED POLYHYDROXYSTYRENE FOR KRF EXCIMER LASER LITHOGRAPHY
    KOBAYASHI, E
    MURATA, M
    YAMACHIKA, M
    KOBAYASHI, Y
    YUMOTO, Y
    MIURA, T
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1992, 203 : 25 - PMSE
  • [8] A new positive resist based on poly(4-hydroxystyrene) for KrF excimer laser lithography
    Kim, I
    Park, SJ
    Lee, SH
    Kim, ER
    Kim, KC
    Lee, H
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2000, 349 : 179 - 182
  • [9] New positive resist based on poly(4-hydroxystyrene) for KrF excimer laser lithography
    Department of Chemistry, Hanyang University, Seoul 133-791, Korea, Republic of
    不详
    Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals, 2000, 349 : 179 - 182
  • [10] A NEGATIVE RESIST FOR KRF-EXCIMER LASER LITHOGRAPHY
    TORIUMI, M
    HAYASHI, N
    HASHIMOTO, M
    NONOGAKI, S
    UENO, T
    IWAYANAGI, T
    POLYMER ENGINEERING AND SCIENCE, 1989, 29 (13): : 868 - 873
12345