Plasma damage and photo-annealing effects of thin gate oxides and oxynitrides during O2 plasma exposure

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Rockwell Int, Newport Beach, United States [1 ]
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IEEE Electron Device Lett | / 3卷 / 82-84期
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Manuscript received August 15; 1995; revised November 1; 1995. This work was supported by SRCKEMATECH under Contract 93-MC-505. K. Lai is with Rockwell International; Newport Beach; CA; 92658; USA; K; Kumar; A; Chou; and 1. C. Lee are with the Microelectronic Research Center; University of Texas at Austin; Austin TX 78712 USA. Publisher Item Identifier S 0741-3 106(96)01960-X;
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