INFLUENCE OF POLARITY ON THE FACET EFFECT IN HEAVILY DOPED GaAs CRYSTALS.

被引：0
作者：
Chu Yiming
He Hongjia
Cao Funian
Bai Yuke
Fei Xueying
Wang Fenglian
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来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1981年 / 2卷 / 02期
关键词：
GALLIUM ARSENIDE;
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摘要：
The influence of the crystalline polarity of GaAs on the facet effect in heavily doped GaAs crystals was investigated. It was found that there is a significant difference between two kinds of facets. Electron microprobe analysis shows that the Te content is higher in the As facet region than the Ga facet region. The ratio of Te content in the facet region to that in the matrix is 3 - 7 for As facets and 1. 3 - 2. 5 for Ga facets. A small angle boundary is observed on the edge of As facets, but does not appear on the edge of Ga facets. The results are discussed by using the difference of nucleation properties of the two kinds of facets.
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页码：85 / 89
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[21]   Effect of Barrier Contacts on Carrier Transport in Homogeneous GaAs Structures Doped with Deep Cr and EL2 Centers [J].
Verkholetov, M. G. ;
Prudaev, I. A. .
SEMICONDUCTORS, 2021, 55 (09) :705-709
[22]   Effect of Barrier Contacts on Carrier Transport in Homogeneous GaAs Structures Doped with Deep Cr and EL2 Centers [J].
M. G. Verkholetov ;
I. A. Prudaev .
Semiconductors, 2021, 55 :705-709
[23]   The Influence of a Doping Profile on the Characteristics of an Ion-Implanted GaAs Field-Effect Transistor with a Schottky Barrier [J].
Shestakov, A. K. ;
Zhuravlev, K. S. .
SEMICONDUCTORS, 2011, 45 (12) :1589-1599
[24]   Dipole behavior in thin film heterostructure composed of Er-doped SnO2 and GaAs: Influence of polarization bias, temperature and stray light [J].
Russo, Fabricio T. ;
Machado, Diego H. O. ;
Scalvi, Luis V. A. .
CHEMICAL PHYSICS, 2023, 573
[25]   Study of silicon-doped VGF-GaAs by DSL-etching and LVM spectroscopy and the influence of B2O3 coating [J].
Hannig, C ;
Schwichtenberg, G ;
Buhrig, E ;
Gärtner, G .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 66 (1-3) :97-101
[26]   SMALL-SIGNAL NONQUASISTATIC MODELS FOR GAAS FIELD-EFFECT TRANSISTORS FOR IMPLEMENTATION IN SPICE .1. MODULATION-DOPED FIELD-EFFECT TRANSISTORS (MODFETS) [J].
LIN, HK ;
ABDELMOTALEB, IM .
IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS, 1991, 138 (06) :735-748
[27]   Self-heating effect in 1.3 μm p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers [J].
Xu, D. W. ;
Tong, C. Z. ;
Yoon, S. F. ;
Zhao, L. J. ;
Ding, Y. ;
Fan, W. J. .
JOURNAL OF APPLIED PHYSICS, 2010, 107 (06)
[28]   Novel features of photoluminescence spectra from acceptor-doped GaAs: Formation of acceptor-acceptor pair emissions and optical compensation effect [J].
Makita, Y .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1996, 16 (6-8) :265-398
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