INFLUENCE OF POLARITY ON THE FACET EFFECT IN HEAVILY DOPED GaAs CRYSTALS.

被引：0
作者：
Chu Yiming
He Hongjia
Cao Funian
Bai Yuke
Fei Xueying
Wang Fenglian
机构：
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1981年 / 2卷 / 02期
关键词：
GALLIUM ARSENIDE;
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摘要：
The influence of the crystalline polarity of GaAs on the facet effect in heavily doped GaAs crystals was investigated. It was found that there is a significant difference between two kinds of facets. Electron microprobe analysis shows that the Te content is higher in the As facet region than the Ga facet region. The ratio of Te content in the facet region to that in the matrix is 3 - 7 for As facets and 1. 3 - 2. 5 for Ga facets. A small angle boundary is observed on the edge of As facets, but does not appear on the edge of Ga facets. The results are discussed by using the difference of nucleation properties of the two kinds of facets.
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页码：85 / 89
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