INFLUENCE OF POLARITY ON THE FACET EFFECT IN HEAVILY DOPED GaAs CRYSTALS.

被引：0
|
作者：
Chu Yiming
He Hongjia
Cao Funian
Bai Yuke
Fei Xueying
Wang Fenglian
机构：
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1981年 / 2卷 / 02期
关键词：
GALLIUM ARSENIDE;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The influence of the crystalline polarity of GaAs on the facet effect in heavily doped GaAs crystals was investigated. It was found that there is a significant difference between two kinds of facets. Electron microprobe analysis shows that the Te content is higher in the As facet region than the Ga facet region. The ratio of Te content in the facet region to that in the matrix is 3 - 7 for As facets and 1. 3 - 2. 5 for Ga facets. A small angle boundary is observed on the edge of As facets, but does not appear on the edge of Ga facets. The results are discussed by using the difference of nucleation properties of the two kinds of facets.
引用
收藏
页码：85 / 89
相关论文
共 50 条
  • [1] INVESTIGATION OF INTERFACE STRUCTURE OF GA FACET GROWN IN THE SI-DOPED GAAS CRYSTALS.
    JIANG SINAN
    1982, V 3 (N 4): : 277 - 281
  • [2] STEREO-ETCHING FOR THE OBSERVATION OF DEFECTS IN HEAVILY Te-DOPED GaAs CRYSTALS.
    Gao, Weibin
    Jinshu Xuebao/Acta Metallurgica Sinica, 1984, 20 (05):
  • [3] INFLUENCE OF IN ATOMS ON THE SHAPE OF DISLOCATION ETCH PITS IN LEC IN-DOPED GaAs CRYSTALS.
    Ono, Haruhiko
    Matsui, Junji
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (10): : 1481 - 1484
  • [4] PHASE IDENTIFICATION IN Fe-DOPED GaAs SINGLE CRYSTALS.
    Harris, I.R.
    Smith, N.A.
    Cockayne, B.
    MacEwan, W.R.
    1600, (82):
  • [5] Magnetic ordering effects in heavily doped GaAs:Fe crystals
    Popov, BP
    Sobolevskii, VK
    Apushkinskii, EG
    Savel'ev, VP
    SEMICONDUCTORS, 2005, 39 (05) : 493 - 498
  • [6] Magnetic ordering effects in heavily doped GaAs:Fe crystals
    B. P. Popov
    V. K. Sobolevskii
    E. G. Apushkinskii
    V. P. Savel’ev
    Semiconductors, 2005, 39 : 493 - 498
  • [7] GROWTH-CELLS OF HEAVILY IN-DOPED LEC GAAS CRYSTALS
    FUJII, T
    NAKAJIMA, M
    FUKUDA, T
    JOURNAL OF CRYSTAL GROWTH, 1988, 87 (04) : 547 - 553
  • [8] Microhardness testing of GaAs single crystals.
    Bergner, F
    Bergmann, U
    Schaper, M
    Hammer, R
    Jurisch, M
    MATERIALPRUFUNG, 2001, 43 (04): : 117 - 122
  • [9] TRANSIENT THERMOELECTRIC EFFECTS IN GaAs CRYSTALS.
    Sasaki, Minoru
    Horisaka, Shuu
    Inoue, Masasi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (10): : 1704 - 1708
  • [10] INFLUENCE OF LIGHT HOLES ON TRANSPORT PHENOMENA IN p-TYPE GaAs CRYSTALS.
    Emel'yanenko, O.V.
    Nasledov, D.N.
    Urmanov, N.A.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (01): : 72 - 74
12345