共 50 条
- [48] Hole trapping as the rate-limiting factor in LDD nMOSFET degradation 1996 INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 1996, : 119 - 124
- [49] A bidirectional DC model of hot-carrier-induced nMOSFET degradation Proceedings of the 46th IEEE International Midwest Symposium on Circuits & Systems, Vols 1-3, 2003, : 265 - 268