SPECIAL FEATURES OF THE PROCESS OF HYDROGEN REDUCTION OF TRICHLOROSILANE IN THE PRESENCE OF WATER VAPOR.

被引：0

作者：

Bogomaz, A.V.

Galkin, P.N.

Levinzon, D.I.

Pravdina, O.V.

Tokarev, V.P.

机构：

来源：

Tsvetnye Metally | 1988年 / 01期

关键词：

HYDROGEN MOISTURE CONTENT - POLYCRYSTALLINE SILICON FILM GROWTH - TRICHLOROSILANE REDUCTION;

D O I：

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学科分类号：

摘要：

A thermodynamic analysis is made of the process of hydrogen reduction of trichlorosilane in the presence of a residual quantity of water vapor. The equilibrium yield of silicon and silicon dioxide is determined as a function of temperature and trichlorosilane and moisture content in the Si-H-Cl-O system. It is established that the presence of moisture in the hydrogen does not lead to a decrease in the equilibrium yield of silicon. The optimally admissible moisture content, which does not lead to impairment of the structure of the polycrystalline silicon films being grown, is determined.

引用

页码：56 / 58