HETEROEPITAXY OF Ge ON Si(100) BY VACUUM EVAPORATION.

被引：0
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作者：
Ohmachi, Yoshiro [1 ]
Nishioka, Takashi [1 ]
Shinoda, Yukinobu [1 ]
机构：
[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo 180, Japan
来源：
Journal of Applied Physics | 1983年 / 54卷 / 09期
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摘要：
19
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页码：5466 / 5469
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