High-field domain formation conditions in semiconductor multiple quantum well sequential resonant tunneling structures

被引：0

作者：

Shimada, Yozo ^{[1
]}

Hirakawa, Kazuhiko ^{[1
]}

机构：

[1] Univ of Tokyo, Tokyo, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 3 A期

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D O I：

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摘要：

引用

页码：1012 / 1014

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[1] High-field domain formation conditions in semiconductor multiple quantum well sequential resonant tunneling structures
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