Cavity parameters of ZnCdSe/ZnSe single-quantum-well separate-confinement-heterostructure laser diodes

被引：0

作者：

Tsujimura, Ayumu ^{[1
]}

Yoshii, Shigeo ^{[1
]}

Hayashi, Shigeo ^{[1
]}

Ohkawa, Kazuhiro ^{[1
]}

Mitsuya, Tsuneo ^{[1
]}

机构：

[1] Matsushita Electric Ind. Co Ltd, Osaka, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 12 A期

关键词：

Heterojunctions - Optical properties - Quantum electronics - Semiconducting zinc compounds - Semiconductor diodes;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The cavity length dependence of the external differential quantum efficiency and the threshold current density was investigated for ZnCdSe/ZnSe single-quantum-well separate-confinement-heterostructure laser diodes at 77 K. An internal loss of 1.5 cm-1, and internal quantum efficiency of 61% for stimulated emission, a transparency current density of 1.8 kA/(cm2 μm) and a gain factor of 0.36 cm2 μm/A were obtained. The transparency current density is 3-4 times larger than that for bulk GaAs. Improvement in the internal quantum efficiency for spontaneous emission will lead to reduction of the operation current.

引用

页码：1750 / 1752