InGaN/AlGaN blue-light-emitting diodes

被引：0

作者：

Nakamura, Shuji ^{[1
]}

机构：

[1] Nichia Chemical Industries, Ltd, Tokushima, Japan

来源：

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 1995年 / 13卷 / 3 pt 1期

关键词：

Electroluminescence - Indium - Photoluminescence - Quantum efficiency - Semiconducting aluminum compounds - Semiconducting indium compounds - Semiconductor doping - Silicon - Traffic signals - Zinc;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

By codoping Zn and Si into the InGaN active layer, highly effective InGaN/AlGaN double heterostructure (OH) blue light emitting diodes (LEDs) were constructed. To achieve longer-wavelength emission for the application to traffic lights, the indium mole fraction of the InGaN active layer was augmented. The properties of the LEDs were measured under dc-biased conditions at room temperature. Photoluminescent measurements were also performed at room temperature. Moreover, the band-gap energy of grown InGaN films were shown as a function of the indium mole fraction x.

引用

页码：705 / 710