New resist technologies for 0.25-μm wiring pattern fabrication with KrF lithography

被引：0

作者：

Kawai, Yoshio ^{[1
]}

Otaka, Akihiro ^{[1
]}

Tanaka, Akinobu ^{[1
]}

Nakamura, Jiro ^{[1
]}

Sakuma, Kazuhito ^{[1
]}

Matsuda, Tadahito ^{[1
]}

Sakakibara, Yutaka ^{[1
]}

机构：

[1] NTT System Electronics Lab, Kanagawa, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 4 A期

关键词：

Crosslinking - Etching - Excimer lasers - Lithography - Semiconductor device manufacture - Thermodynamic stability - Titanium nitride;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A new resist system composed of a chemically amplified positive resist and an organic base designed to be compatible with an acid generator has been developed to improve resolution on TiN films. It was clarified that the non-uniformity of the organic base like the acid generator in the resist film significantly contributes to high resist performance. A new hardening method has also been developed to improve the thermal stability of resist patterns for metal etching. Using the new technologies, 0.25-μm line and space (l&s) resolution on TiN films and highly accurate metal etching have been achieved.

引用

页码：2085 / 2090

共 50 条

[21] Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies
Lauwers, A
Besser, P
Gutt, T
Satta, A
de Potter, M
Lindsay, R
Roelandts, N
Loosen, F
Jin, S
Bender, H
Stucchi, M
Vrancken, C
Deweerdt, B
Maex, K
MICROELECTRONIC ENGINEERING, 2000, 50 (1-4) : 103 - 116
[22] Standing wave effect of various illumination methods in 0.25 mu m KrF excimer laser lithography
Uchiyama, T
Shioiri, S
Hashimoto, T
Kasama, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12B): : 6560 - 6564
[23] A new positive resist based on poly(4-hydroxystyrene) for KrF excimer laser lithography
Kim, I
Park, SJ
Lee, SH
Kim, ER
Kim, KC
Lee, H
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2000, 349 : 179 - 182
[24] New positive resist based on poly(4-hydroxystyrene) for KrF excimer laser lithography
Department of Chemistry, Hanyang University, Seoul 133-791, Korea, Republic of
不详
Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals, 2000, 349 : 179 - 182
[25] 0.12 mu m hole pattern formation by KrF lithography for giga bit DRAM
Nakao, S
Nakae, A
Yamaguchi, A
Kimura, H
Ohno, Y
Matsui, Y
Hirayama, M
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 61 - 64
[26] HOLE PATTERN FABRICATION USING HALF-TONE PHASE-SHIFTING MASKS IN KRF LITHOGRAPHY
OTAKA, A
KAWAI, Y
MATSUDA, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B): : 5880 - 5886
[27] INTEGRATED ELECTRON-BEAM LITHOGRAPHY FOR 0.25 MU-M DEVICE FABRICATION
BUCCHIGNANO, J
ROSENFIELD, M
PEPPER, G
DAVARI, B
HOLM, F
VISWANATHAN, R
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1827 - 1831
[28] 0.25-MU-M TRILEVEL LITHOGRAPHY USING KTI-747 NEGATIVE RESIST FOR THE PLANARIZING LAYER
KUNG, EH
TIMKO, AG
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (11) : 3568 - 3573
[29] 0.1μm level contact hole pattern formation with KrF lithography by Resolution Enhancement Lithography Assisted by Chemical Shrink (RELACS)
Toyoshima, T
Ishibashi, T
Minanide, A
Sugino, K
Katayama, K
Shoya, T
Arimoto, I
Yasuda, N
Adachi, H
Matsui, Y
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 333 - 336
[30] Imaging characteristics of 0.12 μm dynamic random access memory pattern by KrF excimer laser lithography
Nakao, Shuji
Tsujita, Kouichirou
Arimoto, Ichirou
Wakamiya, Wataru
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (12 B): : 6985 - 6993

← 1 2 3 4 5 →