Etching characteristics by M = 0 helicon wave plasma

被引:0
|
作者
机构
来源
| 1600年 / JJAP, Minato-ku, Jpn卷 / 33期
关键词
Etching;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Etching characteristics by M = 0 helicon wave plasma
    Tsukada, Tsutomu, 1600, JJAP, Minato-ku, Japan (33):
  • [2] ETCHING CHARACTERISTICS BY M=0 HELICON WAVE PLASMA
    TSUKADA, T
    NOGAMI, H
    NAKAGAWA, Y
    WANI, E
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7B): : 4433 - 4437
  • [3] SiO2 etching using M=0 helicon wave plasma
    Nogami, H
    Nakagawa, Y
    Mashimo, K
    Ogahara, Y
    Tsukada, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4B): : 2477 - 2482
  • [4] Aluminum etch and after-corrosion characteristics in a m = 0 helicon wave plasma etcher
    Ha, JH
    Yim, MH
    Kim, JJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12B): : 6928 - 6933
  • [5] Etching characteristics of organic low-k dielectrics in the helicon-wave plasma etcher for 0.15um damascene architecture
    Shieh, JM
    Wei, TC
    Liu, CH
    Suen, SC
    Dai, BT
    CHALLENGES IN PROCESS INTEGRATION AND DEVICE TECHNOLOGY, 2000, 4181 : 152 - 160
  • [6] Determination of microparticle characteristics in an etching plasma
    Schepers, L. P. T.
    Beckers, J.
    IJzerman, W. L.
    CONTRIBUTIONS TO PLASMA PHYSICS, 2018, 58 (10) : 985 - 994
  • [7] Characteristics of Ru etching using ICP and helicon O2/Cl2 plasmas
    Kim, HW
    THIN SOLID FILMS, 2005, 475 (1-2) : 32 - 35
  • [8] Etching characteristics of GaN by plasma chemical vaporization machining
    Nakahama, Yasuji
    Kanetsuki, Norio
    Funaki, Takeshi
    Kadono, Masaru
    Sano, Yasuhisa
    Yamamura, Kazuya
    Endo, Katsuyoshi
    Mori, Yuzo
    SURFACE AND INTERFACE ANALYSIS, 2008, 40 (12) : 1566 - 1570
  • [9] Study on the etching damage characteristics of PZT thin films after etching in Cl-based plasma
    Kim, KT
    Kang, MG
    Kim, CI
    MICROELECTRONIC ENGINEERING, 2004, 71 (3-4) : 294 - 300
  • [10] SiO2 etching characteristics using UHF plasma source
    Nogami, H
    Wani, E
    Nakagawa, Y
    Mashimo, K
    Samukawa, S
    Tsukada, T
    NEC RESEARCH & DEVELOPMENT, 1997, 38 (02): : 150 - 157