Comparison of inductively coupled plasma Cl2 and Cl 4/H2 etching of III-nitrides

被引：0

作者：

Cho, Hyun ^{[1
]}

Vartuli, C.B. ^{[1
,4
]}

Donovan, S.M. ^{[1
]}

Abernathy, C.R. ^{[1
]}

Pearton, S.J. ^{[1
]}

Shul, R.J. ^{[2
]}

Constantine, C. ^{[3
]}

机构：

[1] Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, United States

[2] Sandia National Laboratories, Albuquerque, NM 87185, United States

[3] Plasma Therm, Inc., St. Petersburg, FL 33716, United States

[4] Lucent Technologies, Orlando, FL, United States

来源：

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 1998年 / 16卷 / 03期

关键词：

Chromium compounds - Semiconductor alloys - III-V semiconductors - Aluminum nitride - Surface morphology - Chlorine compounds - Gallium nitride;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A parametric study of etch rates, selectivity, surface morphology and etch anisotropy has been performed for Cl2 and CR4/H 2 inductively coupled plasma (ICP) patterning of GaN, AlN, InN, InAlN, and InGaN at low dc self-biases (typically ≤ - 100 V). Controlled etch rates in the range 500-1500 Å min-1 are obtained for all materials. Surface morphology is a strong function of ion energy and plasma composition in both chemistries, while vertical sidewalls are obtained over a wide range of conditions because of the ion-driven nature of the etch mechanism. © 1998 American Vacuum Society.

引用

页码：1631 / 1635