Highly insulating ultrathin SiO2 film grown by photooxidation

被引：0

作者：

机构：

[1] Fukano, Atsuyuki

[2] Oyanagi, Hiroyuki

来源：

Fukano, A. (a.fukano@aist.go.jp) | 1600年 / American Institute of Physics Inc.卷 / 94期

关键词：

Leakage currents - Photons - Photooxidation - Silica - Substrates - Thermooxidation - Ultrathin films;

D O I：

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摘要：

Highly dielectrical ultrathin SiO2 film was grown on Si(001) substrate using VUV photooxidized technique. Average thickness and interface with transition layer thickness were found to depend on wavelength. The results demonstrated that photooxidized film exhibits electrical performance higher than that of thermally oxidized SiO2 film.

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