Velocity matching of a GaAs electro-optic modulator

被引：0

作者：

Haxha, Shyqyri ^{[1
]}

Rahman, B.M. A. ^{[1
]}

Obayya, Salah S.A. ^{[1
]}

Grattan, Kenneth T.V. ^{[1
]}

机构：

[1] Sch. of Eng./Mathematical Sciences, City University London, Northampton Square, London EC1V OHB, United Kingdom

来源：

Applied Optics | 2003年 / 42卷 / 36期

关键词：

Bandwidth - Dielectric losses - Electric conductors - Electric impedance - Electrooptical devices - Finite difference method - Finite element method - Optical coatings - Semiconducting gallium arsenide - Transmission electron microscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

New designs for the velocity matching of a deep-etched semiconductor electro-optic modulator are presented. A tantalum pentoxide (Ta2O5) coating is considered here for achieving velocity matching between the microwave and the optical signals. The effects of the velocity mismatch, the conductor loss, the dielectric loss, and the impedance mismatch are studied in relation to the optical bandwidth of a high-speed semiconductor modulator. It is shown that both the dielectric loss and the impedance matching play key roles for velocity-matched high-speed modulators with low conductor loss. The effects of Ta2O5thickness on the overall bandwidth and on the half-wave voltage-length product VπL are also reported. © 2003 Optical Society of America.

引用

页码：7179 / 7187