Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs double barrier diodes

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J Appl Phys | / 3卷 / 1460期
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[31]   Resonant interband tunneling through multiple subbands in an InAs/AlSb/GaSb interband tunneling structure [J].
Huber, JL ;
Reed, MA ;
Kramer, G ;
Goronkin, H .
COMPOUND SEMICONDUCTORS 1997, 1998, 156 :593-596
[32]   INTERBAND TUNNELING IN POLYTYPE GASB/ALSB/INAS HETEROSTRUCTURES [J].
LUO, LF ;
BERESFORD, R ;
WANG, WI .
APPLIED PHYSICS LETTERS, 1989, 55 (19) :2023-2025
[33]   In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes (vol 52, pg 14025, 1995) [J].
Genoe, J ;
Fobelets, K ;
VanHoof, C ;
Borghs, G .
PHYSICAL REVIEW B, 1996, 53 (19) :13194-13194
[34]   Compositional and structural analysis of AlSb(As) tunneling barriers in InAs/AlSb(As)/GaSb resonant interband-tunneling structures [J].
Wagner, J. ;
Schmitz, J. ;
Obloh, H. ;
Koidl, P. .
Applied Physics Letters, 1995, 67 (20)
[35]   COMPOSITIONAL AND STRUCTURAL-ANALYSIS OF ALSB(AS) TUNNELING BARRIERS IN INAS/ALSB(AS)/GASB RESONANT INTERBAND-TUNNELING STRUCTURES [J].
WAGNER, J ;
SCHMITZ, J ;
OBLOH, H ;
KOIDL, P .
APPLIED PHYSICS LETTERS, 1995, 67 (20) :2963-2965
[36]   Effects of layer design on the performance of InAs/AlSb/GaSb resonant interband tunneling diodes on GaAs substrates [J].
Kumar Shiralagi ;
Jun Shen ;
Ray Tsui .
Journal of Electronic Materials, 1997, 26 :1417-1421
[37]   Effects of layer design on the performance of InAs/AlSb/GaSb resonant interband tunneling diodes on GaAs substrates [J].
Shiralagi, K ;
Shen, J ;
Tsui, R .
JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (12) :1417-1421
[38]   Charge-collection dynamics of AlSb-InAs-GaSb resonant interband tunneling diodes (RITDs) [J].
McMorrow, D ;
Magno, R ;
Bracker, AS ;
Bennett, BR ;
Buchner, S ;
Melinger, JS .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) :1973-1979
[39]   RESONANT TUNNELING IN POLYTYPE INAS/ALSB/GASB HETEROSTRUCTURES [J].
LONGENBACH, KF ;
LUO, LF ;
XIN, S ;
WANG, WI .
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :651-658
[40]   CARRIER TRANSPORT IN INAS/ALSB/GASB INTERBAND TUNNELING STRUCTURES [J].
LIU, MH ;
WANG, YH ;
HOUNG, MP .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (10) :6222-6226